[8p-A201-1~7] 15.1 Bulk crystal growth

[8p-A201-4] Resistivity of Sn-doped β-Ga₂O₃ single crystal grown by vertical Bridgeman method

〇Motohisa Kado¹, Etsuko Ohba², Takumi Kobayashi², Yoshio Nakamura², Keigo Hoshikawa³ (1.Toyota Motor Corp., 2.Fujikoshi Machinery Corp., 3.Shinshu Univ.)

Keywords:gallium oxide, Bridgeman, doping

β-Ga₂O₃ is one of the most attractive wide-bandgap semiconductors because of the bandgap of 4.8eV. We previously obtained a β-Ga₂O₃ single crystal with a diameter of 1 inch by vertical Bridgeman method with Pt-Rh crucible under atmospheric conditions. In this report, we discuss resistivity of Sn-doped β-Ga₂O₃ single crystal grown by vertical Bridgeman method.