[8p-A204-1~10] Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation

[8p-A204-3] Halide Vapor Phase Epitaxy of Meta-stable Gallium Oxides

〇Yuichi OSHIMA¹ (1.NIMS)

Keywords:compound semicouductor, epitaxy

α- and ε-Ga₂O₃ have great potential as promising wide band gap semiconductors in addition to the β-phase. On top of that, these meta-stable phases have unique features such as formation of various solid solutions, spontaneous polarization, etc. Epitaxial techniques of these materials, which are indispensable for their device applications, have been reported recently. In this presentation, halide vapor phase epitaxy of α- and ε-Ga₂O₃ is discussed.