[8p-A204-1~10] Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation

[8p-A204-9] Present Status and Future Prospects of Development on Ga₂O₃ Electrical Devices ~ Power Devices and Beyond ~

〇Masataka HIGASHIWAKI¹, Man Hoi Wong¹, Keita Konishi^2,1, Yoshiaki Nakata¹, Takafumi Kamimura¹, Chia-Hung Lin¹, Ken Goto^3,2, Kohei Sasaki³, Akinori Takeyama⁴, Takahiro Makino⁴, Takeshi Ohshima⁴, Akito Kuramata³, Shigenobu Yamakoshi³, Hisashi Murakami², Yoshinao Kumagai² (1.NICT, 2.Tokyo Univ. of Agri. & Tech., 3.Tamura Corp., 4.QST)

Keywords:gallium oxide, power device, extreme environment electronics

In this talk, we introduce our state-of-the-art technologies of Ga₂O₃ transistors and diodes mainly for power device applications.