[8p-A301-1~12] 15.4 III-V-group nitride crystals

[8p-A301-6] Strain effect on the ultra-thin AlN/GaN super-lattice growth

〇Xu-Qiang Shen¹, T Takahashi¹, T Ide¹, M Shimizu¹ (1.AIST)

Keywords:superlattice, strain

III-Nitride semiconductors are potential materils for optical and electronic device applications. (Al,Ga)N/AlN quantum well (QW) and superlattice are widely used not only as an active layer in the device structure but also as a strain relaxation layer in a highly strained heterostructure system. In this presentation, we report the strain effect on the ultra-thin AlN/GaN superlattice growth.