[8p-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8p-A411-5] Analysis method of nano-particles on a silicon wafer surface

〇Kaoru Fujihara¹, Kazuya Doabshi¹, Misako Saito¹, Satoshi Onodera², Yoshikazu Furusawa² (1.Tokyo Electron, 2.Tokyo Electron Tohoku)

Keywords:semiconductor, particle, wafer

Recent semiconductor manufacturing, the particles less than 20 nm become the yield drop cause. We established analysis method of about 10nm diameter particles on a bare silicon wafer surface by combination of a thin-film formation, a light scattering detection and a FIB-STEM analysis. In addition, we revealed the unique particles on bare silicon wafer surfaces by this method.