[8p-A412-1~12] 9.3 Nanoelectronics

△ [8p-A412-9] Electrical conduction properties of Ni₇₈Fe₂₂/Alq₃/Ni₇₈Fe₂₂ nanojunction devices

〇TAKAHIRO MISAWA¹, Sumito Mori¹, Yuma Sasaki¹, Takashi Komine², Norihisa Hoshino³, Tomoyuki Akutagawa³, Masaya Fujioka¹, Junji Nishii¹, Hideo Kaiju¹ (1.RIES Hokkaido Univ., 2.Eng. Ibaraki Univ., 3.IMRAM Tohoku Univ.)

Keywords:molecular nanoelectronics, thin film, quantized conductance

We have proposed novel nanojunction devices using metal thin-film edges. In this study, we fabricated metal/molecule/metal structures, in which an aluminum complex (Alq₃) was used as a molecular material, and investigated their electrical conduction characteristics. As a result of the measurement of current-voltage characteristics in Ni₇₈Fe₂₂/Alq₃/Ni₇₈Fe₂₂ nanojunction devices with a junction area of 11×11 nm², a linear response with a low resistance of 998 W was observed. In the talk, we report more detailed experimental results on the junction area dependence of the electrical conduction characteristics