[8p-A413-1~7] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [8p-A413-2] Valence-Band Electronic Structure of n-type Ferromagnetic Semiconductor (In,Fe)As

〇MASAKI KOBAYASHI^1,2,3、LE DUC ANH³、PHAM NAM HAI^1,4、YOSHIHISA HARADA⁵、THORSTEN SCHMITT²、ATSUSHI FUJIMORI⁶、MASAAKI TANAKA^1,3、MASAHARU OSHIMA³、VLADIMIR N. STROCOV² (1.CSRN, Univ. of Tokyo、2.Swiss Light Source、3.Gad. Sch. Eng., Univ. of Tokyo、4.Tokyo Tech.、5.ISSP、6.Dep. Phys., Univ. of Tokyo)

キーワード：Ferromagnetic semiconductor, Electronic structure, Angle-resolved photoemission spectroscopy

n-type Ferromagnetic semiconductor (In,Fe)As:Be shows ferromagnetic property depending on carrier concentration. In this study, we have conducted soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) on (In,Fe)As:Be thin films to unveil the origin of carrier-induced ferromagnetism. The three-dimesional band structure has been observed using SX-ARPES. Additionally, resonant ARPES reveals the Fe 3d-derived impurity band in the valence band.