Control of the Energy Band Structure in Ge1−xSnx/Ge1−x−ySixSny Heterostructure by Controlling Elemental Contents and Strain

Masahiro Fukuda; Mitsuo Sakashita; Masashi Kurosawa; Osamu Nakatsuka; Shigeaki Zaima

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[8p-C19-1~7] 15.5 Group IV crystals and alloys

Fri. Sep 8, 2017 1:15 PM - 3:00 PM C19 (C19)

Taizoh Sadoh(Kyushu Univ.)

1:45 PM - 2:00 PM

[8p-C19-3] Control of the Energy Band Structure in Ge_1−xSn_x/Ge_1−x−ySi_xSn_yHeterostructure
by Controlling Elemental Contents and Strain

〇Masahiro Fukuda¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2, Shigeaki Zaima² (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:semiconductror, GeSn/GeSiSn

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Presentation information

[8p-C19-1~7] 15.5 Group IV crystals and alloys

[8p-C19-3] Control of the Energy Band Structure in Ge1−xSnx/Ge1−x−ySixSny Heterostructureby Controlling Elemental Contents and Strain

[8p-C19-3] Control of the Energy Band Structure in Ge_1−xSn_x/Ge_1−x−ySi_xSn_yHeterostructure
by Controlling Elemental Contents and Strain