[8p-PA1-1~27] 6.3 Oxide electronics

[8p-PA1-1] Low-temperature growth of VO₂ films on conductive ZnO electrodes.

〇Kenta Sato¹, Hiroaki Hoshino¹, Tomohiro Aoto¹, Md. Suruz Mian¹, Kunio Okimura¹ (1.Tokai Univ.)

Keywords:Vanadium dioxide, Zinc Oxide

Vadadium dioxide (VO₂) is a hopeful candidate for infrared-light or/and electrical switching device because of its insulator-matal transition (IMT) behavior. In this study, we deposited VO₂ films by inductively-coupled plasma (ICP) assisted radio-frequency magnetron sputtering (RFMS) method and substrate-bias assisted RFMS. We are going to discuss about the crystallization and IMT characteristics of VO₂ films prepared by both of ICP-RFMS and substrate-bias RFMS method.