[8p-PA1-1~27] 6.3 Oxide electronics

[8p-PA1-2] Lowering of transition temperature of VO2 films on ZnO/glass substrates by rf substrate bias sputtering

〇Hiroaki Hoshino¹, Kenta Sato¹, Kunio Okimura¹ (1.Tokai univ.)

Keywords:VO2, ZnO, sputtering method

Vanadium dioxide (VO2) shows insulator-metal phase transition at near room temperature of 68℃, and shows a large change in resistance and light transmittance of infrared light region. However, high transition temperature has been one problem for applications. We attempted to lower the transition temperature by applying in-plane stress to VO2 thin films b-axis oriented on ZnO / glass by high frequency substrate bias sputtering method.