[8p-PB1-1~19] 15.4 III-V-group nitride crystals

[8p-PB1-11] Numerical investigation on control of Stress, Bow, and Dislocation Density in (0001) AlN/GaN Superlattices Grown on Silicon

〇Yuji Mukaiyama¹, Mikhail Rudinsky², Anna Lovanova², Eugene Yakovklev², Roman Talalaev² (1.STR Japan K.K., 2.STR Group - Soft Impact Ltd.)

Keywords:MOCVD epitaxial growth, stress, dislocation density

We report on the numerical investigation on control of Stress, Bow, and Dislocation Density in (0001) AlN/GaN Superlattices Grown on Silicon by simulation software STREEM AlGaN.