[8p-PB1-1~19] 15.4 III-V族窒化物結晶

[8p-PB1-12] Analysis of Gas Phase Kinetics of InN MOVPE Process
- Study of the reaction path -

〇JUNJI SONE¹、KOUTA UEMATSU¹、YUUKI MATSUFUJI¹、MASATO OSHIMA¹、KATSUMI YAMADA¹、MASAHIRO HIGASHI² (1.Tokyo Polytechnic University、2.University of The Ryukyus)

キーワード：Reaction pathways, Density functional theory, MOVPE process

The chemical reaction kinetics for the InN metal organic vapor phase epitaxy was studied. An important species of GaN was developed as the main precursor for film growth and the exchange of molecules from Ga to In. Structures and vibrational frequencies of reactants and transition states were determined by density functional theory, and reaction pathways were compared by the transient energies. It is suggested that some species play a key role in the formation of the first InN nuclei.