[8p-PB1-1~19] 15.4 III-V-group nitride crystals

[8p-PB1-13] Potential difference control of nanotrenches in GaN (0001)/(000-1) by the surface hydrogenation

〇Tomoe Yayama^1,2, Yanlin Gao³, Susumu Okada³, Toyohiro Chikyow² (1.AIST, 2.NIMS, 3.Univ. of Tsukuba)

Keywords:nano structure, gallium nitride, potentail difference control

Using first-principle calculations, we show that nanometer scale trenches excavated in GaN with (0001) and (000-1) surfaces cause a variable electrostatic potential difference of up to a few V, which is tunable by controlling the hydrogen coverage of the surfaces.