1:30 PM - 3:30 PM
[8p-PB1-13] Potential difference control of nanotrenches in GaN (0001)/(000-1) by the surface hydrogenation
Keywords:nano structure, gallium nitride, potentail difference control
Using first-principle calculations, we show that nanometer scale trenches excavated in GaN with (0001) and (000-1) surfaces cause a variable electrostatic potential difference of up to a few V, which is tunable by controlling the hydrogen coverage of the surfaces.