[8p-PB1-1~19] 15.4 III-V-group nitride crystals

[8p-PB1-8] Effect of quasi-atmospheric pressure plasma irradiation on p-GaN surface

〇Naoto Kumagai^1,3, Hirotomo Itagaki², Jaeho Kim³, Hisato Ogiso², Xuelun Wang^1,3, Shingo Hirose², Hajime Sakakita^3,1 (1.GaN-OIL, AIST, 2.AMRI, AIST, 3.ESPRIT, AIST)

Keywords:Nitride semiconductor, MOCVD, Surface