4:15 PM - 4:30 PM
[14p-F201-10] A positron-annihilation study of residual vacancies in n-type-doped Si after annealing
〇Hiroki Kawai1, Yusuke Higashi1, Nakasaki Yasushi1, Takamitsu Ishihara1 (1.Toshiba R&D)
Tue. Mar 14, 2017 1:45 PM - 5:30 PM F201 (F201)
4:15 PM - 4:30 PM
〇Hiroki Kawai1, Yusuke Higashi1, Nakasaki Yasushi1, Takamitsu Ishihara1 (1.Toshiba R&D)