Atsushi Hiraiwa

→ Search for Atsushi Hiraiwa in Google Scholar

Speaker, Author, Co-Author

Wed. Mar 15, 2017 1:15 PM - 5:45 PM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[15p-315-1~17] 13.8 Compound and power electron devices and process technology

1:45 PM - 2:00 PM

[15p-315-3] Time-dependent dielectric breakdown of atomic-layer-deposition Al₂O₃ films on GaN

〇Atsushi Hiraiwa^1,2, Toshio Sasaki¹, Satoshi Okubo³, Daisuke Matsumura³, Hiroshi Kawarada^1,3,4 (1.RONL, Waseda Univ., 2.IMaSS, Nagoya Univ., 3.FSE, Waseda Univ., 4.KMLMST, Waseda Univ.)