Satoshi Nakano

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Speaker, Author, Co-Author

Tue. Mar 14, 2017 9:15 AM - 12:15 PM F201 (F201)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal evaluation, impurities and crystal defects

[14a-F201-1~11] 15.7 Crystal evaluation, impurities and crystal defects

10:00 AM - 10:15 AM

[14a-F201-4] Numerical analysis of dislocation density in Si single crystal using oxygen diffusion

〇Satoshi Nakano², Wataru Fukushima¹, Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)