Takanori Nishihira

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Speaker, Author, Co-Author

Wed. Mar 15, 2017 9:00 AM - 11:45 AM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[15a-315-1~10] 13.8 Compound and power electron devices and process technology

9:30 AM - 9:45 AM

[15a-315-3] Fe concentration dependence on characteristics of AlGaN/GaN HEMT fabricated on Fe-doped GaN templates using Hydride Vapor Phase Epitaxy

〇Takanori Nishihira¹, Naoki Arita¹, Kohei Sugimoto^1,2, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.Ube Indust.)