Kei Ishinoda

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Speaker, Author, Co-Author

Fri. Mar 17, 2017 1:45 PM - 5:00 PM 301 (301)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

2:45 PM - 3:00 PM

[17p-301-4] Study on the Effects of Coexisting O₂ on Wet Oxidation of 4H-SiC Si-face Based on the Changes of Oxidation Rate

〇Kei Ishinoda¹, Koji Kita¹ (1.The Univ. of Tokyo)