Naoto Tamaki

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Speaker, Author, Co-Author

Fri. Mar 17, 2017 1:30 PM - 3:30 PM P3 (BP)

Poster presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[17p-P3-1~22] 15.4 III-V-group nitride crystals

1:30 PM - 3:30 PM

△ [17p-P3-7] Dependence on growth conditions in selective-area growth of GaN nanowires using RF-plasma-assisted molecular beam epitaxy

〇Naoto Tamaki^1,2, Yuya Yamamoto^1,2, Akihito Sonoda^1,2, Junichi Motohisa^1,2 (1.IST Hokkaido Univ., 2.RCIQE Hokkaido Univ.)