Masahiro Horita

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Speaker, Author, Co-Author

Tue. Mar 14, 2017 9:30 AM - 11:45 AM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[14a-315-1~8] 13.8 Compound and power electron devices and process technology

11:00 AM - 11:15 AM

[14a-315-6] Deep level trap in homoepitaxial n-type GaN formed by electron beam irradiation

〇Masahiro Horita¹, Tetsuo Narita², Tetsu Kachi³, Tsutomu Uesugi², Jun Suda¹ (1.Kyoto Univ., 2.Toyota Central R&D Labs., 3.Nagoya Univ.)