Oral presentation

13 Semiconductors » 13.10 Compound solar cells

[15p-F201-1~10] 13.10 Compound solar cells

Wed. Mar 15, 2017 1:15 PM - 3:45 PM F201 (F201)

Hideaki Araki(Natl. Inst. of Tech.,Nagaoka Col.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

△ [15p-F201-1] Growth of Cu₂ZnSn(S,Se)₄ thin films by controlling the group VI vapor pressures

〇(D)Kanta Sugimoto¹, Takuya Ebi¹, Naoki Suyama¹, Kazuyoshi Nakada¹, Akira Yamada¹ (1.Dept. Electrical and Electronic Engineering, Tokyo Tech.)

1:30 PM - 1:45 PM

[15p-F201-2] Surface treatment effect on CZTSe solar cells

〇hitoshi Tampo¹, Shinho Kim¹, Kang Min Kim¹, Hajime Shibata¹, Shigeru Niki¹ (1.AIST)

1:45 PM - 2:00 PM

△ [15p-F201-3] Optical properties of Cu₂ZnGeSe₄ thin films with low Urbach energy: Comparison with Cu-Se-based compound semiconductors

〇Shohei Fujimoto¹, Hitoshi Tampo², Shinho Kim², Kang Min Kim², Hajime Shibata², Shigeru Niki², Hiroyuki Fujiwara¹ (1.Gifu Univ., 2.AIST)

2:00 PM - 2:15 PM

[15p-F201-4] The effect of grain properties during sulfurization process for Cu2SnS3 thin films

〇Fumiaki Mizuno¹, Shuntaro Mikami¹, Ishwor Khatri¹, Mutsumi Sugiyama¹ (1.Faculty of Sci. and Tech. / RIST, Tokyo Univ. of Sci.)

2:15 PM - 2:30 PM

[15p-F201-5] Fabrication of (Cu,Ag)₂SnS₃ thin films by sulfurization process and their application to photovoltaic devices

〇Mitsuki Nakashima¹, Koichi Hatayama¹, Toshiyuki Yamaguchi¹, Hideaki Araki², Shigeyuki Nakamura³, Satoru Seto⁴, Yoji Akaki⁵, Junji Sasano⁶, Masanobu Izaki⁶ (1.N. I. T. Wakayama College, 2.N. I. T. Nagaoka College, 3.N. I. T. Tsuyama College, 4.N. I. T. Ishikawa College, 5.N. I. T. Miyakonojo College, 6.Toyohashi Univ. of Technology)

2:30 PM - 2:45 PM

△ [15p-F201-6] Crystallographic and optical properties of Cu₂(Ge_xSn_1-x)S₃ photovoltaic materials

〇(M1C)Qing Chen¹, Tsuyoshi Maeda¹, Takahiro Wada¹ (1.Ryukoku Univ.)

2:45 PM - 3:00 PM

[15p-F201-7] Effect of Sulfurization and Annealing pressure on SnS thin films

〇Keisuke Asaka¹, Atsushi Okubo¹, Hiroki Sumi¹, Ishwor Khatri¹, Mutsumi Sugiyama¹ (1.Faculty of Sci. and Tech. / RIST, Tokyo Univ. of Sci.)

3:00 PM - 3:15 PM

△ [15p-F201-8] A novel Mg-P-Zn compound in Mg/Zn₃P₂ solar cells

〇(DC)Ryoji Katsube¹, Kenji Kazumi¹, Nose Yoshitaro¹ (1.Kyoto Univ.)

3:15 PM - 3:30 PM

[15p-F201-9] Electrochemical deposition of Cu-doped p-type FeOOH thin films

〇(B)Satoshi Kobayashi¹ (1.Nagoya Inst of Tech)

3:30 PM - 3:45 PM

[15p-F201-10] Studies on Performance of Pb-free perovskite solar cells

Chunfeng Lan¹, Chu Zhang¹, Shuai Zhao¹, 〇Tingli Ma¹ (1.Kyushu Inst.)

Session information

[15p-F201-1~10] 13.10 Compound solar cells

△ [15p-F201-1] Growth of Cu₂ZnSn(S,Se)₄ thin films by controlling the group VI vapor pressures

[15p-F201-2] Surface treatment effect on CZTSe solar cells

△ [15p-F201-3] Optical properties of Cu₂ZnGeSe₄ thin films with low Urbach energy: Comparison with Cu-Se-based compound semiconductors

[15p-F201-4] The effect of grain properties during sulfurization process for Cu2SnS3 thin films

[15p-F201-5] Fabrication of (Cu,Ag)₂SnS₃ thin films by sulfurization process and their application to photovoltaic devices

△ [15p-F201-6] Crystallographic and optical properties of Cu₂(Ge_xSn_1-x)S₃ photovoltaic materials

[15p-F201-7] Effect of Sulfurization and Annealing pressure on SnS thin films

△ [15p-F201-8] A novel Mg-P-Zn compound in Mg/Zn₃P₂ solar cells

[15p-F201-9] Electrochemical deposition of Cu-doped p-type FeOOH thin films

[15p-F201-10] Studies on Performance of Pb-free perovskite solar cells

Authentication

Session information

[15p-F201-1~10] 13.10 Compound solar cells

△ [15p-F201-1] Growth of Cu2ZnSn(S,Se)4 thin films by controlling the group VI vapor pressures

[15p-F201-2] Surface treatment effect on CZTSe solar cells

△ [15p-F201-3] Optical properties of Cu2ZnGeSe4 thin films with low Urbach energy: Comparison with Cu-Se-based compound semiconductors

[15p-F201-4] The effect of grain properties during sulfurization process for Cu2SnS3 thin films

[15p-F201-5] Fabrication of (Cu,Ag)2SnS3 thin films by sulfurization process and their application to photovoltaic devices

△ [15p-F201-6] Crystallographic and optical properties of Cu2(GexSn1-x)S3 photovoltaic materials

[15p-F201-7] Effect of Sulfurization and Annealing pressure on SnS thin films

△ [15p-F201-8] A novel Mg-P-Zn compound in Mg/Zn3P2 solar cells

[15p-F201-9] Electrochemical deposition of Cu-doped p-type FeOOH thin films

[15p-F201-10] Studies on Performance of Pb-free perovskite solar cells

Authentication

△ [15p-F201-1] Growth of Cu₂ZnSn(S,Se)₄ thin films by controlling the group VI vapor pressures

△ [15p-F201-3] Optical properties of Cu₂ZnGeSe₄ thin films with low Urbach energy: Comparison with Cu-Se-based compound semiconductors

[15p-F201-5] Fabrication of (Cu,Ag)₂SnS₃ thin films by sulfurization process and their application to photovoltaic devices

△ [15p-F201-6] Crystallographic and optical properties of Cu₂(Ge_xSn_1-x)S₃ photovoltaic materials

△ [15p-F201-8] A novel Mg-P-Zn compound in Mg/Zn₃P₂ solar cells