1:30 PM - 2:00 PM

[15p-F204-1] [Kashiko Kodate Award Speech] Characterization of defects in wide bandgap semiconductors

〇Yukari Ishikawa¹ (1.Japan Fine Ceramics Center)

2:00 PM - 2:15 PM

[15p-F204-2] [JSAP Young Scientist Award Speech] Correlation between shapes of Shockley stacking faults and structure of basal plane dislocations in 4H-SiC epilayers

〇Akifumi Iijima¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:15 PM - 2:30 PM

[15p-F204-3] Partial Dislocation Motion under Electron Beam Irradiation by SEM

Ryu Nakata¹, 〇Yoshifumi Yamashita¹, Takeshi Nishikawa¹, Masaki Hada¹, Yasuhiko Hayashi¹ (1.Okayama Univ.)

2:30 PM - 2:45 PM

[15p-F204-4] Hall-Voltage Inversion in Heavily Al-doped 4H-SiC by Hall-Effect Measurement

〇(M2)Akinobu Takeshita¹, Tatsuya Imamura¹, Kouta Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

2:45 PM - 3:00 PM

[15p-F204-5] Characterization of Conduction Mechanisms in Heavily Al-Doped 4H-SiC
and Possibility to Reduce Its Resistance

〇(M2)Akinobu Takeshita¹, Tatsuya Imamura¹, Kouta Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

3:00 PM - 3:15 PM

[15p-F204-6] Electrical Characterization of Al-N Co-Doped 4H-SiC Grown by Different Methods

〇(M2)Akinobu Takeshita¹, Tatsuya Imamura¹, Kouta Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Takeshi Mitani², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

3:30 PM - 3:45 PM

[15p-F204-7] Observation of Doped Region in Laser Al Doping of 4H-SiC

〇Akihiro Ikeda¹, Rikuho Sumina¹, Ryota Tsutsui¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (1.Kyushu Univ.)

3:45 PM - 4:00 PM

[15p-F204-8] Formation of Ohmic Contact on the n-type 4H-SiC by Si Cap Annealing

〇(M2)Taichi Taniguchi¹ (1.Hiroshima Univ.)

4:00 PM - 4:15 PM

[15p-F204-9] Mapping of Ni/p-3C-SiC Shottky contacts on 6H-SiC substrate by using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Naoki Mishina¹, Naoto Ichikawa², Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)

4:15 PM - 4:30 PM

[15p-F204-10] Measurements of carrier distribution in SiC PiN diodes by using optical transmission

〇Masashi Kato¹, Shin-ichi Mae¹, Yoshiyuki Yonezawa², Tomohisa Kato² (1.NITech, 2.AIST)

4:30 PM - 4:45 PM

[15p-F204-11] Expansion and Contraction of Single Shockley Stacking Faults in 4H-SiC Epitaxial Layer under Ultraviolet Irradiation

〇Takanori Tanaka¹, Hiromu Shiomi¹, Naoyuki Kawabata², Yoshiyuki Yonezawa¹, Tomohisa Kato¹, Hajime Okumura¹ (1.AIST, 2.Mitsubishi Electric)

4:45 PM - 5:00 PM

[15p-F204-12] Analysis on Relationship between Pulse Generation and Carrier Sweeping-out in Reverse Reocvery of SiC-p⁺/p^-/n⁺ Diode

〇Takuma Shirai¹, Noriyuki Iwamuro¹, Kenji Fukuda² (1.Univ. Tsukuba, 2.AIST)

5:00 PM - 5:15 PM

[15p-F204-13] Analysis on Reverse Recovery Characteristics of SiC-pin Diode Using Body Diode of SiC-pMOSFET

〇(M1)Taiga Goto¹, Takuma Shirai¹, Noriyuki Iwamuro¹, Kenji Fukuda² (1.Tsukuba Univ., 2.AIST)

5:30 PM - 5:45 PM

[15p-F204-14] Robustness against Thermal Runaway of Reverse-Biased Silicon Carbide

〇Minoru Nakagawa¹, Seigo Mori¹, Yuichiro Nanen¹, Masatoshi Aketa¹, Hirokazu Asahara¹, Takashi Nakamura¹ (1.ROHM Co.,Ltd.,)

5:45 PM - 6:00 PM

[15p-F204-15] Observation of color centers in SiC pin diodes

〇Hiroki Tsunemi^1,2, Tomoya Honda^1,2, Takahiro makino², Sinobu Onoda², Shin-ichiro Sato², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ, 2.QST)

6:00 PM - 6:15 PM

[15p-F204-16] Polarization properties of single photon sources in channel region of 4H-SiC MOSFETs

〇Yuta Abe¹, Mitsuo Okamoto², Shinobu Onoda³, Takeshi Ohshima³, Moriyoshi Haruyama^3,4, Wataru Kada⁴, Osamu Hanaizumi⁴, Ryoji Kosugi², Shinsuke Harada², Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.QST, 4.Gunma Univ.)

6:15 PM - 6:30 PM

[15p-F204-17] Research on 4H-SiC pMOSFETs with NbNi silicide

〇(M1)Jun Kajihara¹, Shin-Ichiro Kuroki¹, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Hiroshi Sezaki^1,2, Takamaro Kikkawa¹, Takahiro Makino³, Takeshi Oshima³, Mikael Ostling⁴, Carl-Mikael Zetterling⁴ (1.Hiroshima Univ RNBS., 2.Phenitec Co., 3.QST, 4.KTH)

6:30 PM - 6:45 PM

[15p-F204-18] One dimensional periodic structure of vicinal SiC surface

〇Ryota Koda¹, Kouhei Hukuma¹, Hiroshi Ando¹, Anton Visikovskiy¹, Satoru Tanaka¹ (1.Kyushu Univ.)

6:45 PM - 7:00 PM

[15p-F204-19] N₂ annealing and structural analysis of 4H-SiC m-surfaces

〇Atsushi Shioji¹, Anton Visikovskiy¹, Takashi Kajiwara¹, Satoru Tanaka¹ (1.Kyushu Univ.)

Session information

[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)