Session information

Poster presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-P12-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Mar 15, 2017 4:00 PM - 6:00 PM P12 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[15p-P12-1] Effect of Light Concentrator Irradiation on Carrier Mobility of n- and p- Type Si Substrates by Hall Measurements

〇Shuya Tategami¹, Kenjiro Takauchi¹, Naoki Tokuda¹, Hidetoshi Suzuki¹, Tetsuo Ikari¹, Kensuke Nishioka¹, Atsuhiko Fukuyama¹ (1.Univ. of Miyazalki)

4:00 PM - 6:00 PM

[15p-P12-2] High Density Formation of Si Quantum Dots with Ge core on Si Sub-micron Patterned Si Wire Structures and Their Electroluminescence

〇Lei Gao¹, Mitsuhisa Ikeda¹, Kentaro Yamada¹, Katsunori Makihara¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

4:00 PM - 6:00 PM

[15p-P12-3] first-principles study on leakage current caused by oxygen vacancies at HfO₂/SiO₂/Si interface

〇(M1)Kensuke Takagi¹, Tomoya Ono^1,2 (1.Grad. School of Pure and Appl. Soc. Univ. of Tsukuba, 2.Center for Comp. of Soc. Univ. of Tsukuba)

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Session information

[15p-P12-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-P12-1] Effect of Light Concentrator Irradiation on Carrier Mobility of n- and p- Type Si Substrates by Hall Measurements

[15p-P12-2] High Density Formation of Si Quantum Dots with Ge core on Si Sub-micron Patterned Si Wire Structures and Their Electroluminescence

[15p-P12-3] first-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface

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[15p-P12-3] first-principles study on leakage current caused by oxygen vacancies at HfO₂/SiO₂/Si interface