Oral presentation

21 Joint Session K » 21.1 Joint Session K

[17a-502-1~10] 21.1 Joint Session K

Fri. Mar 17, 2017 9:00 AM - 11:45 AM 502 (502)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [17a-502-1] Effect of Ga Content on the Density of Oxygen Vacancies in Solution-processed IGZO Thin Films

〇(M1)Yusuke Ochiai¹, Takaaki Morimoto¹, Nobuko Fukuda³, Yoshimichi Ohki^1,2 (1.SASE of Waseda Univ., 2.RIMST of Waseda Univ., 3.FLEC of AIST)

9:15 AM - 9:30 AM

△ [17a-502-2] Effects of UV Irradiation and Annealing on Solution-processed IGZO Thin-films

〇Yuki Takamori¹, Yusuke Ochiai¹, Takaaki Morimoto¹, Nobuko Fukuda³, Yoshimichi Ohki^1,2 (1.SASE of Waseda Univ., 2.RIMST of Waseda Univ., 3.FLEC of AIST)

9:30 AM - 9:45 AM

[17a-502-3] Characterization of NBITS instability in amorphous oxide semiconductor TFTs

〇Yuuki Ohno¹, Kousaku Shimizu¹ (1.Nihon Univ.)

9:45 AM - 10:00 AM

▼ [17a-502-4] Au/Mo-catalyzed Vapor-Liquid-Solid Growth of InGaZnO Nanowires from Amorphous Thin Film

〇(M1)JenichiClairvaux Escubio Felizco¹, Mutsunori Uenuma¹, Daiki Senaha¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

10:00 AM - 10:15 AM

[17a-502-5] Reverse bias voltage dependence of responsivity in Pt/ Mg_xZn_1-xO/n-ZnO Schottky photodiodes

〇Haruyuki Endo¹, Kyo Takahashi¹, Yasube Kashiwaba² (1.Iwate Ind. Res. Inst., 2.Iwate Univ.)

10:30 AM - 10:45 AM

[17a-502-6] Measurement of the absolute value of quantum efficiency of radiation in a ZnO single crystal

〇Kazunobu Kojima¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ.)

10:45 AM - 11:00 AM

[17a-502-7] Electronic structure and carrier doping of Sn₂Nb₂O₇

〇Yoshihiro Aiura¹, Kenichi Ozawa², Izumi Hase¹, Kyoko Bando¹, Hiroto Haga^1,3, Hirofumi Kawanaka¹, Akane Samizo^1,4, Naoto Kikuchi¹ (1.AIST, 2.Tokyo Tech, 3.Ibaraki Univ., 4.Tokyo Univ. of Sci.)

11:00 AM - 11:15 AM

[17a-502-8] Investigation of depletion layer properties and sensing responsibility of SnO₂-based gas sensor
using electrical impedance spectroscopy

〇Ryo Tanuma¹, Mutsumi Sugiyama¹ (1.Faculty of Sci. & Tech. / RIST, Tokyo Univ. of Sci.)

11:15 AM - 11:30 AM

[17a-502-9] Development of high hydrogen-sensitive thermal desorption spectroscopy system
- Application to quantitative analysis of low hydrogen-concentration in oxide semiconductor thin films -

〇(PC)Taku Hanna¹, Hidenori Hiramatsu^1,2, Isao sakaguchi³, Hideo Hosono^1,2 (1.MCES, Tokyo Tech, 2.MSL, Tokyo Tech, 3.NIMS)

11:30 AM - 11:45 AM

[17a-502-10] Development of novel reaction control technology for thin film fabrication using mist flow generating spacial & time gap

〇Toshiyuki Kawaharamura¹, Giang T. Dang¹, Li Liu¹, Pradeep E.K.C.¹, Munetaka Tatsuta¹, Mamoru Furuta¹, Yuta Suwa¹, Shota Sato¹, Yoshiaki Nakasone¹, Shunsuke Yamaoki¹, Misaki Nishi¹, Yusuke Kobayashi¹, Masahito Sakamoto¹, Phimolphan Rutthongjan¹ (1.Kochi Univ. of Tech.)

Session information

[17a-502-1~10] 21.1 Joint Session K

△ [17a-502-1] Effect of Ga Content on the Density of Oxygen Vacancies in Solution-processed IGZO Thin Films

△ [17a-502-2] Effects of UV Irradiation and Annealing on Solution-processed IGZO Thin-films

[17a-502-3] Characterization of NBITS instability in amorphous oxide semiconductor TFTs

▼ [17a-502-4] Au/Mo-catalyzed Vapor-Liquid-Solid Growth of InGaZnO Nanowires from Amorphous Thin Film

[17a-502-5] Reverse bias voltage dependence of responsivity in Pt/ Mg_xZn_1-xO/n-ZnO Schottky photodiodes

[17a-502-6] Measurement of the absolute value of quantum efficiency of radiation in a ZnO single crystal

[17a-502-7] Electronic structure and carrier doping of Sn₂Nb₂O₇

[17a-502-8] Investigation of depletion layer properties and sensing responsibility of SnO₂-based gas sensor
using electrical impedance spectroscopy

[17a-502-9] Development of high hydrogen-sensitive thermal desorption spectroscopy system
- Application to quantitative analysis of low hydrogen-concentration in oxide semiconductor thin films -

[17a-502-10] Development of novel reaction control technology for thin film fabrication using mist flow generating spacial & time gap

Authentication

Session information

[17a-502-1~10] 21.1 Joint Session K

△ [17a-502-1] Effect of Ga Content on the Density of Oxygen Vacancies in Solution-processed IGZO Thin Films

△ [17a-502-2] Effects of UV Irradiation and Annealing on Solution-processed IGZO Thin-films

[17a-502-3] Characterization of NBITS instability in amorphous oxide semiconductor TFTs

▼ [17a-502-4] Au/Mo-catalyzed Vapor-Liquid-Solid Growth of InGaZnO Nanowires from Amorphous Thin Film

[17a-502-5] Reverse bias voltage dependence of responsivity in Pt/ MgxZn1-xO/n-ZnO Schottky photodiodes

[17a-502-6] Measurement of the absolute value of quantum efficiency of radiation in a ZnO single crystal

[17a-502-7] Electronic structure and carrier doping of Sn2Nb2O7

[17a-502-8] Investigation of depletion layer properties and sensing responsibility of SnO2-based gas sensorusing electrical impedance spectroscopy

[17a-502-9] Development of high hydrogen-sensitive thermal desorption spectroscopy system- Application to quantitative analysis of low hydrogen-concentration in oxide semiconductor thin films -

[17a-502-10] Development of novel reaction control technology for thin film fabrication using mist flow generating spacial & time gap

Authentication

[17a-502-5] Reverse bias voltage dependence of responsivity in Pt/ Mg_xZn_1-xO/n-ZnO Schottky photodiodes

[17a-502-7] Electronic structure and carrier doping of Sn₂Nb₂O₇

[17a-502-8] Investigation of depletion layer properties and sensing responsibility of SnO₂-based gas sensor
using electrical impedance spectroscopy

[17a-502-9] Development of high hydrogen-sensitive thermal desorption spectroscopy system
- Application to quantitative analysis of low hydrogen-concentration in oxide semiconductor thin films -