Session information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17a-B5-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Fri. Mar 17, 2017 9:00 AM - 12:30 PM B5 (B5)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [17a-B5-1] Growth of GaAsPN p-i-n junctions on Si substrate with lattice matching condition toward multi-junction solar cells

〇Kento Sato¹, Keisuke Yamane¹, Masaya Goto¹, Kenjiroh Takahashi¹, Hiroto Sekiguchi¹, Hiroshi Okada^1,2, Akihiro Wakahara¹ (1.Toyohashi Tech., 2.Toyohashi Tech. EIIRIS.)

9:15 AM - 9:30 AM

△ [17a-B5-2] Electrical properties of GaAsPN p-i-n junctions on Si substrates toward lattice matched III-V/Si solar cells

〇(M1)Kenjiroh Takahashi¹, Keisuke Yamane¹, Kento Sato¹, Masaya Goto¹, Hiroto Sekiguchi¹, Hiroshi Okada², Akihiro Wakahara¹ (1.TUT, 2.TUT EIIRIS)

9:30 AM - 9:45 AM

[17a-B5-3] Corrugation reduction of a periodically inverted AlGaAs waveguide by introducing CMP process

〇Takashi Matsumoto¹, Tomonori Matsushita^1,2, Takashi Kondo^1,2 (1.School of Engineering, 2.RCAST, Univ. of Tokyo)

9:45 AM - 10:00 AM

[17a-B5-4] A GaAs/AlAs coupled multilayer cavity grown on (113)B GaAs with sublattice reversal

〇Xiangmeng Lu¹, Yasuo Minami¹, Takahiro Kitada¹ (1.Tokushima Univ.)

10:00 AM - 10:15 AM

▼ [17a-B5-5] Two-Substrate-Temperatures Growth Technique: An effective method for reduction of Bi segregation effect in GaAsBi/GaAs MQWs

〇(DC)Pallavi Patil¹, Esperanza Luna², Kohki Yamada¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (1.Ehime Univ., 2.Paul-Drude-Institut)

10:15 AM - 10:30 AM

[17a-B5-6] Size distribution of InAs wires grown on (775)B GaAs (775)B substrates

〇Koki Yamada¹, Yuki Sato¹, Satoshi Shimomura¹ (1.Ehime Univ.)

10:45 AM - 11:15 AM

[17a-B5-7] [Kashiko Kodate Award Speech] Study on defect control in semiconductor crystals towards development of novel optical devices

〇Yoriko Tominaga¹ (1.Hiroshima Univ.)

11:15 AM - 11:30 AM

[17a-B5-8] Defects in In_xGa_1-xAs grown by solid-phase epitaxy on InP substrate

〇Kentaro Hirayama¹, Yoriko Tominaga¹, Yutaka Kadoya¹, Hitoshi Morioka², Noriaki Ikenaga³, Osamu Ueda³ (1.AdSM, Hiroshima Univ., 2.Bruker AXS K.K., 3.Kanazawa Institute of Technology)

11:30 AM - 11:45 AM

[17a-B5-9] Properties of InGaAs/InAlAs Quantum Wells Grown on (111)InP Substrates by MBE

〇Yuichi Kawamura¹, Azusa Taniguchi¹ (1.Osaka Pref. Univ.)

11:45 AM - 12:00 PM

[17a-B5-10] Effects of Strain Compensation Layer with InAsSb Quantum Well using MOVPE

〇(M1)Keita Yoshimoto¹, Yuya Yamagata¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

12:00 PM - 12:15 PM

[17a-B5-11] As₂ pressure dependence of InAs growth on vicinal GaSb (001) substrate

〇Shigekazu Okumura¹, Shuichi Tomabechi¹, Ryo Suzuki¹, Koji Tsunoda¹, Junichi Kon¹, Hironori Nishino¹ (1.Fujitsu Lab. LTD)

12:15 PM - 12:30 PM

[17a-B5-12] Plane orientation dependence of electrical conductivity of biaxially-strained GaSb

〇Hideki Kishimoto¹, Akira Akaishi¹, Jun Nakamura¹ (1.UEC-Tokyo)

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