[14a-213-1~12] 6.4 薄膜新材料

▲ [14a-213-3] Deposition of Yttria Stabilized Zirconia (YSZ) Film on ZEOCOAT^® Layer by Reactive Sputtering

〇(D)Haque Mayeesha Masrura¹、Horita Susumu¹ (1.Japan Adv. Inst. Sci. & Tech. (JAIST))

キーワード：Reactive Sputtering, YSZ thin film, X-ray diffraction

Yttrium Stabilized Zirconia (YSZ) has been reported to be effective to stimulate crystallization of amorphous Si (a-Si). ZEOCOAT^® has good prospect as a thermal and electrical insulator in the field of flexible electronics for prevention of heat damage of organic substrates. YSZ films have been deposited on ZEOCOAT^® layers with/without a thin metallic film by reactive sputtering using Ar and O₂ as sputtering and reactive gases, respectively. The crystalline property of YSZ films on ZEOCOAT^® layers with/without a metallic film has been studied using X-ray diffraction technique. It has been observed that direct deposition of YSZ on ZEOCOAT^® produced an amorphous film while deposition of a thin metallic film on ZEOCOAT^® promoted crystallinity of YSZ to some extent.