[14a-311-1~12] 12.2 Characterization and Materials Physics

[14a-311-8] Surface Morphology of Pentacene Film on Si substrate Characterized by In-Situ Grazing-Incidence Small Angle X-ray Scattering (I)

〇Ichiro Hirosawa¹, Takeshi Watanabe¹, Koganezawa Tomoyuki¹, Noriyuki Yoshimoto² (1.JASRI, 2.Iwate Univ.)

Keywords:organic semiconductor, surface morphology, X-ray scattering

Effects of film thickness on surface morphology of evapolated pentacene film were studied by Grazing-incidence small angle X-ray scattering (GISAXS). A streaky scattering profile along to surface normal was observed about 0.003 nm^-1 of in-plane component of wavenumber, thinner film than 1.0 nm. Another streaky profile appeared around 0.020 nm^-1 over 2.5 nm.