[14a-313-1~12] 12.1 Fabrications and Structure Controls

[14a-313-12] Fabrication of Wet Process IGZO-TFT with Low Doped In and Ga for Flexible RFID Tag Application

〇Shimpei Shu¹, Hikaru Tanaka¹, Tomoaki Hirayama¹, Hiroshi Yamauchi¹, Yugo Okada², Masatoshi Sakai¹, Masaaki Iizuka³, Kazuhiro Kudo¹ (1.Graduate School of Engineering, Chiba Univ, 2.Center for Frontier Science, Chiba Univ, 3.Faculty of Education, Chiba Univ)

Keywords:RFID tag, IGZO, wet process

We have proposed an active antenna using vertical transistor with step structure (SVC-FET) and loop antenna for a modulation element of RFID tag. In the previous research, organic semiconductor materials were used for the active layer of transistor, but the modulation was low and the performance was insufficient to practical use. Therefore, wet process IGZO film was applied for the transistor active layer. Since the price of In and Ga become expensive, evaluated results of IGZO transistor with a low ratio of In and Ga and simulation results after the reduction of stray capacitance of SVC-FET are reported.