Control of electrical properties using ion implantation and application to GaN-based integrated circuit

Hiroshi Okada; Hiroto Sekiguchi; Seiya Kamizuki; Keisuke Yamane; Akihiro Wakahara

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14a-315-1~8] 13.8 Compound and power electron devices and process technology

Tue. Mar 14, 2017 9:30 AM - 11:45 AM 315 (315)

Seiji Nakamura(TMU)

11:30 AM - 11:45 AM

[14a-315-8] Control of electrical properties using ion implantation and application to GaN-based integrated circuit

〇Hiroshi Okada¹, Hiroto Sekiguchi¹, Seiya Kamizuki¹, Keisuke Yamane¹, Akihiro Wakahara¹ (1.Toyohashi Tech.)

Keywords:Nitride semiconductors, ion implantation, integrated circuit

We investigate ion-implantation conditions to achieve a control of electrical properties of GaN. We also investigate fabrication process for GaN-based integrated circuit.