The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[14a-411-1~10] 13.9 Optical properties and light-emitting devices

Tue. Mar 14, 2017 9:15 AM - 11:45 AM 411 (411)

Yasushi Nanai(Nihon Univ.)

9:15 AM - 9:30 AM

[14a-411-1] Thermal quenching analyses of Eu2+-activated Sr-containing sialon phosphors using the thermally activated cross-over model.

Yumi Fukuda1 (1.Toshiba R&D Center)

Keywords:phosphor, sialon, thermal quenching

To investigate the relation between the luminescence properties and the crystal structure, the thermal quenching of three kinds of Eu2+-activated Sr-containing sialon phosphors are analyzed using the Struck-Fonger model. The Franck-Condon offset and the inherent frequency of the host lattice are calculated from the measured internal quantum efficiency at various temperatures, and the results confirm that the inherent frequency of the host lattice dominates the thermal quenching of these phosphors. Moreover, clarification of the relationship between these parameters and the host crystal structure reveals that the covalence and density of the host crystal structure mainly influence the inherent frequency and therefore influence the extent of the thermal quenching.