[14a-411-1~10] 13.9 Optical properties and light-emitting devices

▲ [14a-411-7] Impurity-induced near-UV emission from boron nitride (II) Preparation of field emission lamps (FELs)

〇Rong-Jun Xie¹, Kohsei Takahashi¹, Takashi Takeda¹, Naoto Hirosaki¹ (1.NIMS)

Keywords:phosphor, boron nitride, field emission lamp

UV light sources are used for many industrial, medical and analytical applications such as adhesive curing, covert communication, biodetection, phototherapy and water purification. BN phosphors show a broad emisison band including three sub-bands centered at 307, 319 and 333 nm under electron irradiation, enabling it to be used in UV field emisison lamps (FELs). In this work, we attempted to use BN phosphors to prepare near UV FELs, and discussed their optical properties.