In-situ observation of Cu movement in MoOx/Al2O3 double layer CBRAM during cyclic switching process

Shuichiro Hirata; ryusuke ishikawa; Atsushi Tsurumaki-Fukuchi; Masashi Arita; Yasuo Takahashi; Masaki Kudo; Syo Matsumura

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[14a-419-1~10] 6.3 Oxide electronics

Tue. Mar 14, 2017 9:00 AM - 11:30 AM 419 (419)

Kohei Fujiwara(Tohoku Univ.)

9:45 AM - 10:00 AM

△ [14a-419-4] In-situ observation of Cu movement in MoO_x/Al₂O₃ double layer CBRAM during cyclic switching process

Shuichiro Hirata¹, 〇ryusuke ishikawa¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Masaki Kudo², Syo Matsumura² (1.Hokkaido Univ., 2.Kyushu Univ.)

Keywords:ReRAM, In-situ TEM

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Presentation information

[14a-419-1~10] 6.3 Oxide electronics

△ [14a-419-4] In-situ observation of Cu movement in MoOx/Al2O3 double layer CBRAM during cyclic switching process

△ [14a-419-4] In-situ observation of Cu movement in MoO_x/Al₂O₃ double layer CBRAM during cyclic switching process