[14a-501-1~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▼ [14a-501-10] Fabrication of Single Crystalline Magnetoresistive Sensors on Polycrystalline Electrode using Three-Dimensional Integration Technology

〇(DC)陳 嘉民^1,3、桜庭 裕弥¹、劉 軍¹、薬師寺 啓²、高木 秀樹²、渡辺 直也²、福島 章雄²、菊地 克弥²、湯浅 新治²、宝野 和博^1,3 (1.物材機構、2.産総研、3.筑波大)

キーワード：CPP-GMR, Read head sensor, magnetic sensor

We fabricated high-performance fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) multilayer on a Si(001) wafer at process temperatures of up to 500ºC and then integrated it on a poly-crystalline electrode using three-dimensional integration processes. These processes enable applying the epitaxial CPP-GMR devices to the read sensors for ultrahigh-density hard disk drives.