[14a-501-1~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▼ [14a-501-11] Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors

〇(D)中野 貴文¹、大兼 幹彦¹、古市 喬干²、安藤 康夫^1,3 (1.東北大院工、2.（株）デンソー、3.スピントロニクス学術連携研究教育センター)

キーワード：Magnetic tunnel junction (MTJ), Perpendicular magnetic anisotropy (PMA), Magnetic sensor

We developed CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with a perpendicularly magnetized synthetic antiferromagnetic (p-SAF) reference layer for magnetic sensor applications. The MTJs exhibited linear tunnel magnetoresistance curves to out-of-plane applied magnetic fields with dynamic ranges more than ±2.5 kOe, which are wider than those in CoFeB/MgO/CoFeB-MTJs reported to date. The performance metrics of MTJ sensors, i.e., sensitivity and nonlinearity, depend significantly on the anisotropy field of the free layer. We explained the dependences by a simple model based on the Stoner-Wohlfarth and Slonczewski models, which gives us a guideline to design the sensor performance metrics. These findings demonstrated that MTJs with a p-SAF reference layer are promising candidates for wide-dynamic-range magnetic sensors.