[14a-501-1~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [14a-501-3] Theoretical study for magnetic tunneling junctions including semiconductor barriers CuInSe₂ and CuGaSe₂

〇増田 啓介¹、三浦 良雄^1,2 (1.物材機構、2.京都工繊大)

キーワード：magnetic tunneling junction, semiconductor barrier

We investigated transport properties of magnetic tunneling junctions (MTJs) with semiconductor barriers CuInSe₂ (CIS) and CuGaSe₂ (CGS). These semiconductors are terminal compounds of CuIn_1-xGa_xSe₂ (CIGS), which is a hopeful barrier layer of MTJs giving high magnetoresitance (MR) ratios and low resistant-area products (RA). By means of the first-principles-based calculations and the Landauer formula, we calculated MR ratios and RA values in both the Fe/CIS/Fe and Fe/CGS/Fe MTJs. We found that the coherent tunneling of the \delta₁ wave functions occurs in both the MTJs. We also found that the MR ratios of the CGS-based MTJs are much larger than those of the CIS-based MTJs. We show that the RA values of both the MTJs are much lower than those of the well-known MgO-based MTJs.