[14a-501-1~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [14a-501-4] Analysis of bulk spin-polarization in Co₂FeGa_0.5Ge_0.5 thin films via anisotropic magnetoresistance effect

〇桜庭 裕弥¹、古門 聡士²、中谷 友也¹、李 松田¹、古林 孝夫¹、田尻 寛男³、三浦 良雄^1,4、宝野 和博¹ (1.物材機構、2.静岡大工、3.JASRI、4.京工繊大)

キーワード：half-metallic Heusler, CPP-GMR

Recently giant MR ratio over 80% at RT were reported in CPP-GMR devices with hafl-metallic Heusler electrodes. However, the origin of large temperature dependence of MR ratio has not been clearified so far. In this talk, we will report our recent analysis for temperature dependence of bulk spin-polarization in CFGG films having different compostion ratios via anisotropic magnetoresistance effect.