[JSAP Young Scientist Award Speech] Fabrication of Si doped α-Ga<sub>2</sub>O<sub>3</sub> for device applications

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K

Tue. Mar 14, 2017 9:30 AM - 12:15 PM 502 (502)

9:30 AM - 9:45 AM

〇Takayuki Uchida¹, Riena Jinno¹, Shu Takemoto¹, Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ.)

Keywords:Ga2O3, Power device