[14a-503-1~12] 15.4 III-V-group nitride crystals

[14a-503-11] Effect of In-situ Surface Reformation by N Radical Beam Irradiation on InN Growth

〇(M1)Ryoichi Fujita¹, Faizulsalihin bin Abas¹, Nur Liyana binti Zainol Abidin¹, Shinichiro Mouri¹, Tsutomu Araki¹, Yasushi Nanishi¹ (1.Ritsumeikan Univ.)

Keywords:Indium nitride, MBE, threading dislocation

InN which has the smallest bandgap of 0.65 eV and highest mobility in nitride semiconductors is attracting attention for the application of high-frequency electronic devices and thermoelectric devices. However the growth of high quality InN is not easy due to large lattice mismatch with substrate materials. Thus, InN has very large threading dislocation density. In this study, the effect of in-situ nitrogen radical beam irradiation on InN growth i.e. the surface morphology changes and the interraction between dislocations and point defects will be demonstrated.