The 64th JSAP Spring Meeting, 2017

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-503-1~12] 15.4 III-V-group nitride crystals

Tue. Mar 14, 2017 9:00 AM - 12:15 PM 503 (503)

Tsutomu Araki(Ritsumeikan Univ.), Jitsuo Ohta(Univ. of Tokyo)

9:30 AM - 9:45 AM

△ [14a-503-3] Crystalline quality of sputtered AlN buffer layer on r-sapphire substrate and its annealing effects

〇Shunya Otsuki1, Daiki Jinno1,2, Hisayoshi Daicho2, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1, Isamu Akasaki1,3 (1.Meijo Univ., 2.Koito Manufacturing, 3.Akasaki Res. Cen., Nagoya Univ.)

Keywords:r-plane sapphire, sputtering, annealing effects