The 64th JSAP Spring Meeting, 2017

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-503-1~12] 15.4 III-V-group nitride crystals

Tue. Mar 14, 2017 9:00 AM - 12:15 PM 503 (503)

Tsutomu Araki(Ritsumeikan Univ.), Jitsuo Ohta(Univ. of Tokyo)

10:00 AM - 10:15 AM

[14a-503-5] Thin-film transistors based on InGaN grown at room temperature

〇Kyohei Nakamura1, Atsushi Kobayashi1, Takeki Itoh1, Lye Khe Shin1, Mari Morita1, Kohei Ueno1, Jitsuo Ohta1,2, Yuki Tokumoto1, Hiroshi Fujioka1,3 (1.The Univ of Tokyo, 2.JST-PRESTO, 3.JST-ACCEL)

Keywords:InGaN