[14p-211-1~17] 3.9 Terahertz technologies

[14p-211-2] Terahertz detection by InAs MOSHEMT on quartz glass substrate

〇Eiji Kume¹, Hiroyuki Ishii², Wen-Hsin Chang², Mutsuo Ogura¹, Haruichi Kanaya³, Tanemasa Asano³, Tatsuro Maeda² (1.IRspec, 2.AIST-NeRI, 3.Kyushu Univ.)

Keywords:terahertz, MOSHEMT

1.0 THz wave was detected using InAs MOSHEMT fabricated on quartz glass. Terahertz wave with -32 dBm at 1.0 THz, was input to the gate terminal through the ground-signal-ground (GSG) THz probe. InAs MOSHEMT with the two fingers gate consists of 80 um gate width and 1 um gate length detected terahertz wave. The drain voltage response was measured at room temperature. The response curve had a peak value of 63 V/W at gate bias of -0.4 V.