5:15 PM - 5:30 PM
△ [14p-313-15] Influence of N-doped LaB6 Electrode Patterning on Pentacene Thin Film Formation
Keywords:pentacene, LaB6, lithography
The p-type pentacene-based OFET with a N-doped LaB6 interfacial layer had been investigated and it was found that the N-doped LaB6 interfacial layer contributed to the improvement of device characteristics. In this paper, the influence of electrode patterning process on a pentacene film will be reported to fabricate n-type bottom-contact geometry pentacene-based OFETs with N-doped LaB6 layers.