Fabrication of VOx/Si3N4/SiO2 membrane by Deep-RIE and XeF2 vapor etching

Kohei Maeda; Kunio Nishioka; Hai Van Nhu; Akihiro Matsutani; Takashi Tachiki; Takashi Uchida

Presentation information

Oral presentation

1 Interdisciplinary Physics and Related Areas of Science and Technology » 1.3 Novel technologies and interdisciplinary engineering

[14p-317-1~10] 1.3 Novel technologies and interdisciplinary engineering

Tue. Mar 14, 2017 1:15 PM - 4:00 PM 317 (317)

Akihiro Matsutani(Titech)

1:45 PM - 2:00 PM

[14p-317-3] Fabrication of VO_x/Si₃N₄/SiO₂ membrane by Deep-RIE and XeF₂ vapor etching

〇Kohei Maeda¹, Kunio Nishioka², Hai Van Nhu¹, Akihiro Matsutani², Takashi Tachiki¹, Takashi Uchida¹ (1.National Defense Academy, 2.Semiconductor and MEMS, Tokyo Tech)

Keywords:MOD, VOx thin films, bolometer

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Presentation information

[14p-317-1~10] 1.3 Novel technologies and interdisciplinary engineering

[14p-317-3] Fabrication of VOx/Si3N4/SiO2 membrane by Deep-RIE and XeF2 vapor etching

[14p-317-3] Fabrication of VO_x/Si₃N₄/SiO₂ membrane by Deep-RIE and XeF₂ vapor etching