The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[14p-411-1~14] 13.9 Optical properties and light-emitting devices

Tue. Mar 14, 2017 1:15 PM - 5:00 PM 411 (411)

Takashi Kunimoto(Tokushima Bunri Univ.), Haruki Fukada(Kanazawa Inst. of Tech.)

4:45 PM - 5:00 PM

[14p-411-14] Photocapacitance Measurement of AlGaN

Shinnosuke Yamato1, Takuya Ohi1, Takahiro Ohashi2, Yoshiko Shiraiwa2, Tadao Tanabe1, Ryuichi Toba2, Yutaka Oyama1 (1.Tohoku Univ., 2.Tohoku Univ. GSES)

Keywords:photocapacitance, aluminum gallium nitride

Recently, AlGaN has been expected to be applied to optoelectronics because of their large bandgap energy. The purpose of this study is to evaluate photocapacitance properties of AlGaN in the ultraviolet region. AlGaN wafers were grown on a Sapphire substrate went from Xe lamp light spectrum in the monochromator and the measured light capacity for specific wavelengths in the ultraviolet region. Discussing the phenomenon from data obtained by ultraviolet light irradiation in AlGaN.