[14p-411-1~14] 13.9 Optical properties and light-emitting devices

[14p-411-14] Photocapacitance Measurement of AlGaN

〇Shinnosuke Yamato¹, Takuya Ohi¹, Takahiro Ohashi², Yoshiko Shiraiwa², Tadao Tanabe¹, Ryuichi Toba², Yutaka Oyama¹ (1.Tohoku Univ., 2.Tohoku Univ. GSES)

Keywords:photocapacitance, aluminum gallium nitride

Recently, AlGaN has been expected to be applied to optoelectronics because of their large bandgap energy. The purpose of this study is to evaluate photocapacitance properties of AlGaN in the ultraviolet region. AlGaN wafers were grown on a Sapphire substrate went from Xe lamp light spectrum in the monochromator and the measured light capacity for specific wavelengths in the ultraviolet region. Discussing the phenomenon from data obtained by ultraviolet light irradiation in AlGaN.