The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[14p-411-1~14] 13.9 Optical properties and light-emitting devices

Tue. Mar 14, 2017 1:15 PM - 5:00 PM 411 (411)

Takashi Kunimoto(Tokushima Bunri Univ.), Haruki Fukada(Kanazawa Inst. of Tech.)

3:30 PM - 3:45 PM

[14p-411-9] Er3+, Ni2+-co-doped broadband-sensitive upconverters for solar energy harvesting

Yasuhiko Takeda1, Luitel Hom Nath1, Shintaro Mizuno1 (1.Toyota Central R&D Labs.)

Keywords:upconversion, sensitization, crystalline silicon solar cells

We have realized upconversion from 1.1-1.6 um photons to 0.98 um using perovskite materials like La(Ga,Sc)O3 co-doped with Er3+ and Ni2+. 1.1-1.45 um photons are absorbed by the Ni2+ sensitizers, followed by energy transfer to the Er3+ emitters. Tuning the compositions of the host perovskites realized a high efficiency of the energy transfer close to unity, with suppressing back transfer from the Er3+ to the Ni2+.