[14p-412-1~18] 6.2 Carbon-based thin films

▲ [14p-412-9] The Effect of Annealing in Oxygen Ambient on the Single Crystal Diamond Mechanical Resonators

〇Meiyong Liao¹, Haihua Wu¹, Liwen Sang¹, Masataka Imura¹, Tokuyuki Teraji¹ (1.NIMS)

Keywords:MEMS, diamond

The exceptional mechanical and tribological properties, the highest thermal conductivity, chemicalinertness, and outstanding thermal stability of diamond make it attractive for micro- or nano-electromechanical system (MEMS/NEMS). Due to the high reproducibility in the fabrication of single crystal diamond (SCD) MEMS/NEMS structures and the high reliability of the corresponding devices, SCD MEMS/NEMS has aroused growing interest. We have developed the ion-implantation assisted lift-off (IAL) technique for the batch fabrication of nanoscale SCD resonators and NEMS switches in a controlled manner. The IAL method offers the facile systematic integration for MEMS/NEMS applications. Generally, the quality factor (Q-factor) is the most important key figure-of-merit for MEMS/NEMS. We realized that the Q-factor of the IAL SCD resonator was strongly degraded by the ion-implantation induced damaged layer. Therefore, we made efforts in improving the Q-factor by growing thick SCD layer to reduce the effect of the damaged layer at the cantilever bottom. On the other hand, it is expected the Q-factor could be much improved if the whole damaged layer could be removed.
In this work, we investigate the effect of the high-temperature annealing in oxygen ambient on the resonance properties of the SCD cantilevers.