[14p-502-1~15] 21.1 Joint Session K

[14p-502-2] Evaluation of defects in EFG-grown β-Ga₂O₃ crystals (1) - Dislocations corresponding to arrays of etch pits on (201) substrates -

〇Osamu Ueda¹, Noriaki Ikenaga¹, Tomoya Moribayashi², Kimiyoshi Koshi³, Kazuyuki Iizuka³, Akito Kuramata³, Makoto Kasu² (1.Kanazawa Inst. Tech., 2.Saga Univ., 3.Tamura Corp.)

Keywords:gallium oxide, dislocation, transmission electron microscopy

We report the results of evaluation of dislocations in EFG-grown (\overline{2}01)-oriented β-Ga₂O₃ substrates by etching and TEM. First, arrays of etch pits were observed by etching with phosphoric acid. By cross-sectional TEM, dislocations were observed corresponding to the etch pits. By contrast experiment, it has been found that the dislocations are edge type and do not dissociate. Based on these results, we will also discuss generation mechanism for the dislocations.